5.2 High Performance InGaAs MOSFETs with an InGaP Interface Control Layer and ALD-Al2O3 Gate Oxide for RF Switch Applications

Qingzhen Xia, Institute of Microelectronics, Chinese Academy of Sciences

Kailiang Huang, Institute of Microelectronics, Chinese Academy of Sciences

Hudong Chang, Institute of Microelectronics, Chinese Academy of Sciences

Shengkai Wang, Institute of Microelectronics, Chinese Academy of Sciences

Bing Sun, Institute of Microelectronics, Chinese Academy of Sciences

Honggang Liu, Institute of Microelectronics, Chinese Academy of Sciences

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