5.4 Performance and Stability of Enhancement-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Dielectric

Jiabei He, The Hong Kong University of Science and Technology

Mengyuan Hua, The Hong Kong University of Science and Technology

Zhaofu Zhang, The Hong Kong University of Science and Technology

Gaofei Tang, The Hong Kong University of Science and Technology

Kevin J. Chen, The Hong Kong University of Science and Technology

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