5.5 Modification of amorphous-SiNx/GaN Interface Trap Density by Nitridation: A First-Principles Calculation Study

Zhaofu Zhang, The Hong Kong University of Science and Technology
Mengyuan Hua, The Hong Kong University of Science and Technology
Jiabei He, The Hong Kong University of Science and Technology
Qingkai Qian, The Hong Kong University of Science and Technology
Kevin J. Chen, The Hong Kong University of Science and Technology
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