5b.3 Effect of Carbon Doping on the Voltage-Blocking Properties of AlN/AlGaN/GaN Heterostructures

Martin Huber, Infineon Technologies Austria AG
Ingo Daumiller, Infineon Technologies Austria AG
Andrei Andreev, Infineon Technologies Austria AG
Marco Silvestri, Infineon Technologies Austria AG
Lauri Knuuttila, Infineon Technologies Austria AG
Michael Wahl, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
Michael Kopnarski, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
Alberta Bonanni, Johannes Kepler University Linz
Anders Lundskog, Infineon Technologies Austria AG
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