6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

C. Basceri, Qromis, Inc.

V. Odnoblyudov, Qromis, inc.

C. Kurth, Qromis, Inc.

M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd

S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd

M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd

C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp

S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp

J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp

Karen Geens, imec, Leuven, Belgium

A. Vohra, imec, Leuven, Belgium

H. De Pauw, CMST, imec & Ghent University

Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium

S. Decoutere, imec

H. Hahn, AIXTRON SE

M. Heuken, AIXTRON SE

K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd

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