6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

Abstract Submission Site is LIVE! The first 10 abstracts submitted and accepted will be eligible for a prize drawing.

Eric Guiot, SOITEC

Frédéric Allibert, SOITEC

Jürgen Leib, Fraunhofer IISB

Tom Becker, Fraunhofer IISB

Oleg Rusch, Fraunhofer IISB

Alexis Drouin, SOITEC

Walter Schwarzenbach, SOITEC

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