6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

Eric Guiot, SOITEC
Frédéric Allibert, SOITEC
Jürgen Leib, Fraunhofer IISB
Tom Becker, Fraunhofer IISB
Oleg Rusch, Fraunhofer IISB
Alexis Drouin, SOITEC S.A.
Walter Schwarzenbach, SOITEC
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