May 10, 2022 // 3:00pm

2.4 Advances in Homoepitaxial GaN grown by MOCVD for Vertical Electronic Devices

F. Kaess, IQE MA, Taunton USA
O. Laboutin, IQE MA, Taunton USA
H. Marchand, IQE MA, Taunton USA
C.-K Kao, IQE MA, Taunton USA
Wayne Johnson, IQE MA, Taunton USA

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