May 10, 2022 // 3:00pm

2.4 Advances in Homoepitaxial GaN grown by MOCVD for Vertical Electronic Devices

F. Kaess, IQE MA, Taunton USA
O. Laboutin, IQE MA, Taunton USA
H. Marchand, IQE MA, Taunton USA
C.-K Kao, IQE MA, Taunton USA
Wayne Johnson, IQE MA, Taunton USA
Loader Loading...
EAD Logo Taking too long?

Reload Reload document
| Open Open in new tab

Download [0.96 MB]

Download Paper