7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates

Stefano Leone, Fraunhofer IAF
Birte-Julia Godejohann, Fraunhofer IAF
Peter Brueckner, Fraunhofer IAF
Lutz Kirste, Fraunhofer IAF
Christian Manz, Fraunhofer IAF
M. Swoboda, Siltectra GmbH
C. Beyer, Siltectra GmbH
Jan Richter, Siltectra GmbH
Ruediger Quay, Fraunhofer IAF
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