7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates

Stefano Leone, Fraunhofer IAF

Birte-Julia Godejohann, Fraunhofer IAF

Peter Brueckner, Fraunhofer IAF

Lutz Kirste, Fraunhofer IAF

Christian Manz, Fraunhofer IAF

M. Swoboda, Siltectra GmbH

C. Beyer, Siltectra GmbH

Jan Richter, Siltectra GmbH

Ruediger Quay, Fraunhofer IAF

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