7A.2 – Development of 6-Inch Indium Phosphide Substrates

Y. Oeki, Sumiden Semiconductor Materials Co., Ltd.
K. Aoyama, Sumiden Semiconductor Materials Co., Ltd.,
K. Hashio, Sumiden Semiconductor Materials Co., Ltd.,
M. Adachi, Sumiden Semiconductor Materials Co., Ltd.,
Y. Yoshizumi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd

7A.2 Final.2025

Abstract
In this paper, we report 6-inch indium phosphide (InP) substrates with very low dislocation density produced using SEI’s Vertical Boat (VB) method. The growth conditions have been optimized to reduce crystal defects.