8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers

Minkyu Cho, Georgia Institute of Technology, Atlanta, GA

Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA

Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA

Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA

Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA

Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA

Theeradetch Detchprohm, Georgia Tech

Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA

Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA

[embeddoc url=”http://csmantech.org/wp-content/uploads/Digest/Digests-2021/8.5.2021_CS_MANTECH_Wafer-level-mapping-of-GaN-PIN-rectifier.pdf” download=”all” viewer=”google”]

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