Abstract
In this work, Gallium Oxide (β-Ga2O3) based trench Schottky barrier diodes (TSBDs) with field plate edge-termination are reported. The SiNx field plate edge-terminated TSBDs show an improvement in breakdown voltage up to 2.3 kV as compared to the unterminated structures of 1 kV. The electric field simulations show a reduction in peak electric field at the edge of the diodes when terminated with SiNx field plates. Reliability measurements were performed by reverse-bias step-stressing and observing the on-state performance post stressing. An increase in on-resistance for TSBDs with field plate edge termination up to 12% is observed when devices are stressed at 1 kV.
