8b.3 AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm - CS MANTECH Conference CS MANTECH Conference

Grab Your CSMANTECH Swag

8b.3 AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm

Jie Hong Ng, University of Fukui

Joel Asubar, University of Fukui

Hirokuni Tokuda, University of Fukui

Masaaki Kuzuhara, University of Fukui

Download Paper