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8b.3 AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm
Jie Hong Ng, University of Fukui
Joel Asubar, University of Fukui
Hirokuni Tokuda, University of Fukui
Masaaki Kuzuhara, University of Fukui
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