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May 01, 2019 // 2:00pm – 2:20pm
9.2 Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects
Riad Kabouche, IEMN-CNRS, Villeneuve d'Ascq
Idriss Abid, IEMN-CNRS, Villeneuve d'Ascq
Malek Zegaoui, IEMN-CNRS, Villeneuve d'Ascq
Kai Cheng, Enkris Semiconductor, Inc.
Farid Medjdoub, IEMN-CNRS, Villeneuve d'Ascq
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