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May 01, 2019 // 3:00pm – 3:20pm
9.5 Low Interface Noise of p-GaN Gate Normally-off HEMT with Microwave Ohmic Annealing Process
Yi-Sheng Chang, Chang Gung University
Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
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