9.5 Low Interface Noise of p-GaN Gate Normally-off HEMT with Microwave Ohmic Annealing Process - CS MANTECH Conference CS MANTECH Conference

May 01, 2019 // 3:00pm – 3:20pm

9.5 Low Interface Noise of p-GaN Gate Normally-off HEMT with Microwave Ohmic Annealing Process

Yi-Sheng Chang, Chang Gung University

Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan

Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan

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