A Low-Annealing-Temperature Process Using Si-Incorporated Contact Stacks for n-Type III-Nitride Semiconductors - CS MANTECH Conference CS MANTECH Conference

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A Low-Annealing-Temperature Process Using Si-Incorporated Contact Stacks for n-Type III-Nitride Semiconductors

Yi-Che Lee, Georgia Institute of Technology

A F M Saniul Haq, Georgia Institute of Technology

Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA

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