A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage shift

P. Waltereit, Fraunhofer Institute
A. Leuther, Fraunhofer Institute
J. Rüster, Fraunhofer Institute
H. Czap, Fraunhofer Institute
R. Iannucci, Fraunhofer Institute
S. Müller, Fraunhofer Institute
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