AlGaN/GaN MOS-HEMTs using RF magnetron Sputtered SiO2 Gate Insulator and Post-Annealing Treatment - CS MANTECH Conference CS MANTECH Conference

AlGaN/GaN MOS-HEMTs using RF magnetron Sputtered SiO2 Gate Insulator and Post-Annealing Treatment

Liang Pang, University of Illinois at Urbana-Chamapign

Ogyun Seok, Korea Electrotechnology Research Institute

Kevin (Kim) Kyekyoon, University of Illinois at Urbana-Chamapign

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