AlGaN/GaN MOS-HEMTs using RF magnetron Sputtered SiO2 Gate Insulator and Post-Annealing Treatment

Liang Pang, University of Illinois at Urbana-Chamapign
Ogyun Seok, Korea Electrotechnology Research Institute
Kevin (Kim) Kyekyoon, University of Illinois at Urbana-Chamapign
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