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Comparison of Thermal Properties of Packaged AlGaN/GaN HFETs on Si and n-SiC Substrates
R. Zhytnytska, Ferdinand-Braun-Institut
J. Böcker, Technische Universität Berlin
H. Just, Technische Universität Berlin
E. Bahat-Treidel, Ferdinand-Braun-Institut
O. Hilt, Ferdinand-Braun-Institut
S. Dieckerhoff, Technische Universität Berlin
J. Würfl, Ferdinand-Braun-Institut
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