Effect of Gate Threshold Swings by ALD-Al2O3/AlGaN Interfacial Traps in GaN Power HEMT with Multiple Fluorinated Gate Dielectric Layers

Yun-Hsiang Wang, National University of Singapore
Yung C. Liang, National University of Singapore
Ganesh S. Samudra, National University of Singapore
Bo-Jhang Huang, National Tsing Hua University
Ya-Chu Liao, National Tsing Hua University
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