Effect of Gate Threshold Swings by ALD-Al2O3/AlGaN Interfacial Traps in GaN Power HEMT with Multiple Fluorinated Gate Dielectric Layers - CS MANTECH Conference CS MANTECH Conference

Effect of Gate Threshold Swings by ALD-Al2O3/AlGaN Interfacial Traps in GaN Power HEMT with Multiple Fluorinated Gate Dielectric Layers

Yun-Hsiang Wang, National University of Singapore

Yung C. Liang, National University of Singapore

Ganesh S. Samudra, National University of Singapore

Bo-Jhang Huang, National Tsing Hua University

Ya-Chu Liao, National Tsing Hua University

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