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Effect of Oxidant Source on Threshold Voltage Shift of AlGaN/GaN MIS-HEMTs Using ALD-Al2O3 Gate Insulator films
Shiro Ozaki, Fujitsu Limited
Toshihiro Ohki, Fujitsu Laboratories Ltd.
Masahito Kanamura, Fujitsu Laboratories Ltd.
Tadahiro Imada, Fujitsu Laboratories Ltd.
Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
Naoya Okamoto, Fujitsu Laboratories Ltd.