Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates

Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
Mark Breen, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
John P. Bettencourt, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
Oleg Laboutin, IQE
Chien-Fong, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
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