Explore
Our Mission
Board of Directors
Executive Committee
Technical Program Committee
2022 Conference Collage
Sponsors
Exhibitor
Authors
Digests
Contact
Attendee Registration
Attendee Registration OPEN!
Exhibit Hall is sold out
Explore
Our Mission
Board of Directors
Executive Committee
Technical Program Committee
2022 Conference Collage
Sponsors
Exhibitor
Authors
Digests
Contact
Attendee Registration
Formation of slanted gates for GaN-based HEMTs by combined plasma and wet chemical etching of silicon nitride
A. Thies
N. Kemf, Ferdinand-Braun-Institut
S. A. Chevtchenko, Ferdinand-Braun-Institut
Download Paper