Explore
Our Mission
Board of Directors
Executive Committee
Technical Program Committee
Conference
Conference at a Glance
Advance Program & Sessions
Sponsors
Exhibitor
Exhibitor Floorplan
Exhibitor add-ons
Authors
Digests
Contact
Explore
Our Mission
Board of Directors
Executive Committee
Technical Program Committee
Conference
Conference at a Glance
Advance Program & Sessions
Sponsors
Exhibitor
Exhibitor Floorplan
Exhibitor add-ons
Authors
Digests
Contact
Formation of slanted gates for GaN-based HEMTs by combined plasma and wet chemical etching of silicon nitride
A. Thies
N. Kemf, Ferdinand-Braun-Institut
S. A. Chevtchenko, Ferdinand-Braun-Institut
Download Paper