Formation of slanted gates for GaN-based HEMTs by combined plasma and wet chemical etching of silicon nitride - CS MANTECH Conference CS MANTECH Conference

Formation of slanted gates for GaN-based HEMTs by combined plasma and wet chemical etching of silicon nitride

A. Thies, 1Ferdinand-Braun-Institut (FBH)

N. Kemf, Ferdinand-Braun-Institut

S. A. Chevtchenko, Ferdinand-Braun-Institut

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