High Aspect Ratio Individual Source Through Wafer Vias for High Frequency GaAs pHEMT Processes

H. Stieglauer, United Monolithic Semiconductors Germany

E. Dengler, United Monolithic Semiconductors Germany

M. Hosch, United Monolithic Semiconductors Germany

P. Michel, United Monolithic Semiconductors France

C. Teysandier, United Monolithic Semiconductors France

H. Blanck, United Monolithic Semiconductors Germany

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