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High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2
Woojin Choi, Seoul National University
Hojin Ryu, Student Presentation Seoul National University
Ogyun Seok, Korea Electrotechnology Research Institute
Minseok Kim, Student Presentation Seoul National University
Ho-Young Cha, Student Presentation Seoul National University
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