High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2

Woojin Choi, Seoul National University

Hojin Ryu, Student Presentation Seoul National University

Ogyun Seok, Kumoh National Institute of Technology

Minseok Kim, Student Presentation Seoul National University

Ho-Young Cha, Student Presentation Seoul National University

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