High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2

Woojin Choi, Seoul National University

Hojin Ryu, Student Presentation Seoul National University

Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea

Minseok Kim, Student Presentation Seoul National University

Ho-Young Cha, Student Presentation Seoul National University

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