May 12, 2022 // 2:50pm

17.5 High-Temperature SiC Power Module with Integrated LTCC-Based Gate Driver

P. Lai, University of Arkansas, Fayetteville
S. Chinnaiyan, University of Arkansas, Fayetteville
S. Ahmed, University of Arkansas, Fayetteville
A. Mantooth, University of Arkansas, Fayetteville
Z. Chen, University of Arkansas, Fayetteville
D. Gonzalez, University of Arkansas, Fayetteville

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