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Implementation of slanted sidewall gates technology in the fabrication of S-, X-, and Ka-band AlGaN/GaN HEMTs.
K. Y. Osipov, Ferdinand-Braun-Institut
S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)
O. Bengtsson, Ferdinand-Braun-Institut
P. Kurpas, Ferdinand-Braun-Institut
F. Brunner, Ferdinand-Braun-Institut
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