Improved Gate leakage and Microwave Performance by Inserting A Thin Erbium oxide layer on AlGaN/GaN/Silicon HEMT Structure

Fu-Chuan Chua, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
Ying-Jie Tsaia, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
Sheng-Yu Liaoa, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
Chou-Shuang Huanga, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
Ray-Ming Lina, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
Sheng-Fu Yub, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
Shuh-Sen Renc, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology