InAlN HEMT Epi and RF Devices on 8”-Si

Huili Xing, Cornell University
Ming Pan, Veeco Instruments
Soo-Min Lee, Veeco Instruments
Eric Tucker, Veeco Instruments
Randhir Bubber, Veeco Instruments
Ajit Paranjpe, Veeco Instruments
Drew Hanser, Veeco Instruments, Inc.
Kazuki Nomoto, Cornell University
Lei Li, Cornell University
Debdeep Jena, Cornell University

In this paper, we report our work on epitaxial growth of InAlN HEMTs for RF device applications.  InAlN HEMTs were grown on 8” high resistivity silicon substrates. Various characterization techniques were used to analyze the quality of the epi wafers. An average sheet resistance (Rsh) of 206Ω/□, with a uniformity of 1.5% (1s/average), indicated a high quality and uniform 2DEG. Hall measurement showed a high sheet charge density of 2.27×1013cm−2 and a mobility of 1430cm2/(Vs). A pit free epi surface was obtained with optimized growth process of the active layers. T-gate RF devices fabricated on the InAlN epi wafers demonstrated an fT of 250GHz and an fMAX of 204 GHz, which are the record high values for GaN-based HEMTs on silicon.

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