Investigation and Reduction of Leakage Current Associated with Gate Encapsulation in by SiNx AlGaN/GaN HFETs - CS MANTECH Conference CS MANTECH Conference

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Investigation and Reduction of Leakage Current Associated with Gate Encapsulation in by SiNx AlGaN/GaN HFETs

S. A. Chevtchenko, Ferdinand-Braun-Institut

P. Kurpas, Ferdinand-Braun-Institut

N. Chaturvedi, Ferdinand-Braun-Institut