Methods of Improving and Optimizing Isolation Implantation for Stacked HBT on HEMT Epitaxial GaAs Semiconductor Devices

Shiban Tiku, Skyworks Solutions, Inc.
Sasha Kurkcuoglu, Skyworks Solutions, Inc.

The issues of achieving good isolation and low leakage for complex integrated circuits such as stacked HBT on HEMT (BiHEMT) epitaxial GaAs semiconductor devices are described in this paper. The need for achieving a balance between short cycle time and optimum performance by use of appropriate ion implant species and schedules (energy/dose) are discussed in detail.

Download Paper