P-type and N-type Channeling Ion Implantation of SiC and Implications for Device Design and Fabrication

Takashi Kuroi, Nissin Ion Equipment Inc.
Hrishikesh Das, ON Semiconductor USA
Swapna Sunkari, ON Semiconductor USA
Joshua Justice, ON Semiconductor USA
Roman Malousek, ON Semiconductor CZ
Jan Chochol, ON Semiconductor CZ
Ryota Wada, Nissin Ion Equipment Inc.

This work focuses on evaluating and demonstrating channeled p-type and n-type implantations in silicon carbide in a repeatable mass-production environment. Range increase of about 3X is observed using channeled conditions as opposed to normal incident conditions for both Aluminum and Phosphorous. The various advantages enabled by this technology for advanced device designs are highlighted. Super-junction devices targeting the same voltage range can be fabricated using 1 or 2 lesser epitaxial regrowth layers.

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