Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy

Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
William Hoke
David Altman
James McClymonds
Paul Alcorn
Kurt Smith
Eduardo Chumbes
Jeff Letaw
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