Plasma Enhanced Atomic Layer Deposited Silicon Nitride on GaN MISCAPs with High Charge and Mobility

Ken Cadien, University of Alberta
Eric Milburn, University of Alberta
Alex Ma, University of Alberta
Gem Shoute, University of Alberta
Doug Barlage, University of Alberta

In this work fabrication of MISCAP structures was achieved on n-type gallium nitride using atomic layer deposited silicon nitride as the dielectric layer and sputtered ruthenium contacts. Preliminary values extracted from C-f data suggests very high capacitance densities up to 3.18 μF∙cm-2 and very high accumulation-mode field effect mobility, as high as 325 cm2V-1s-1 at a bias voltage of 2.5 V.

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