Abstract
Electron mobility as high as 300 cm2/Vs and resistivity as low as 26 Ω·cm were demonstrated in Si-doped AlN by applying point and extended defect management to suppress compensation. Using this doping capability, AlN Schottky barrier diodes were designed and fabricated. The diodes are capable of passing kA/cm2 in the forward bias while simultaneously blocking voltages in the kV range. These results demonstrate the feasibility of AlN as a platform for next-generation power electronics.
