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May 12, 2022 // 3:20pm
18.11 Prevention of 1.2 kV SiC MOSFET from Punch-through Phenomenon by Self-align Channel Process
Ogyun Seok, Korea Electrotechnology Research Institute
Hyowon Yoon, Kumoh National Institute of Technology
Sua Choi, Kumoh National Institute of Technology
Yeongeun Park, Kumoh National Institute of Technology
Hojun Lee, Pusan National University of Korea
Jeehun Jeong, Pusan National University of Korea
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