May 12, 2022 // 3:20pm

18.11 Prevention of 1.2 kV SiC MOSFET from Punch-through Phenomenon by Self-align Channel Process

Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
Hyowon Yoon, Kumoh National Institute of Technology
Sua Choi, Kumoh National Institute of Technology
Yeongeun Park, Kumoh National Institute of Technology
Hojun Lee, Pusan National University of Korea
Jeehun Jeong, Pusan National University of Korea

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