Productization of the Superlattice Castellated Field Effect Transistor

Justin Parke, Northrop Grumman Mission Systems
Ishan Wathuthanthri, Northrop Grumman Mission Systems
Ken Nagamatsu, Northrop Grumman Mission Systems
Annaliese Drechsler, Northrop Grumman Mission Systems
Josephine Chang, Northrop Grumman Mission Systems
Georges Siddiqi, Northrop Grumman Mission Systems
Randy Lewis, Northrop Grumman Mission Systems
Robert Howell, Northrop Grumman Mission Systems

NGMS reports the maturation of a novel GaN based 3D transistor with state of the art RF switch performance, named the SLCFET (Super Lattice Castellated Field Effect Transistor), with an RF switch FOM greater than 1.8 THz. The configured process has undergone reliability qualification for production.

Download Paper