The performance and reliability of AlGaN/AlN/GaN HEMT on 4 inch semi-insulating SiC substrate fabricated with baseline GaN HEMT process of Wavice Inc. have been reported. The baseline process of Wavice Inc. includes AlxGa1-xN/AlN/u-GaN/Fe-GaN epi structure with x=22%, Si+ ion implanted and recess etched ohmic, 0.4 um gate length, Ni based gamma Gate, electro plated void free source connected field plate (SCFP), 5 um thick electro plated interconnect metal, 85 um SiC substrate thickness after grinding, through SiC via directly to the source ohmic metal with sloped side wall, 7 um thick electro plated back side metal. To qualify the process technology, 3 non-consecutive lots were produced. DC/RF characterization and a list of reliability tests have been done on randomly selected devices.