18.18 Reduction in Thermal Boundary Conductance of Annealed Direct Wafer Bonded GaN|Si Heterojunction Interfaces

May 12, 2022 // 3:20pm

K. Huynh, University of California, Los Angeles, CA USA

M. E. Liao, University of California, Los Angeles, CA USA

V. Dragoi, EV Group

Eric Guiot, SOITEC

Raphael Caulmilone, SOITEC

M.S. Goorsky, University of California, Los Angeles, CA USA

X. Yan, University of California Irvine

T. Pfeifer, University of Virginia Charlottesville

N. Razek, EV Group and R-Ray Medical

X. Pan, Soitec

P. E. Hopkin, University of Virginia Charlottesville

J. Tomko, University of Virginia Charlottesville

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