May 19, 2022 // 2:10pm

17.3 Regrown Ohmic contact of InAlN/GaN HEMTs based on MOCVD

Jingshu Guo, Xidian University, Xi'an, China
Jiejie Zhu, Xidian University, Xi'an, China
Siyu Liu, Xidian University, Xi'an, China
Jiahao Xu, Xidian University, Xi'an, China
X. Zhao, Massachusetts Institute of Technology
Ma Xiaohua, Xidian University, Xi'an, China

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