Wet-etching Process Problem Identification in Type-II InP DHBT for 5G Power Application

Milton Feng, University of Illinois Urbana-Champaign
Yu-Ting Peng, University of Illinois at Urbana Champaign
Xin Yu, University of Illinois at Urbana-Champaign

Wet-etching issues in type-II DHBT process fabricated by standard triple-mesa wet-etching have been identified and reported in this paper. For comparison, devices fabricated by hybrid-etching with incorporation of inductively-coupled-plasma (ICP) are also present. With better uniformity and yield, hybrid-etching process can potentially lead to a more reliable and reproducible process for 5G power amplifier application.

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