Paper # | Duration | Abstract # | Title | Author | Location | |
1.1 | 45 | Invited | Next Revolution in Compound Semiconductor Materials | DARPA | Rosker | US-E |
1.2 | 45 | Invited | Challenges and opportunities in remote epitaxy for releasable epilayers on graphene | MIT | Kim | US-E |
2.1 | 30 | Invited | GaN-on-diamond design for manufacturing | Akash | Francis | UK |
2.2 | 20 | 32 | Hybrid NH<sub>3</sub>/N<sub>2</sub> Molecular Beam Epitaxy with Artificial Intelligence Assisted RHEED Analysis | gmail.com | Noh | Korea |
2.3 | 20 | 51 | Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications | transphormusa.com | Liu | US-P |
2.4 | 20 | 15 | The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects | semilabsdi.com | Wilson | US-E |
2.5 | 20 | 33 | A deep learning-based multi-model method for etching defect image classification | winfoundry.com | Chou | Taiwan |
2.6 | 20 | 36 | Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC | gmail.com | Marinskiy | US-E |
3.1 | 30 | 12 Invited |
Fabrication of High-Performance Compound Semiconductor RF Circuits Using Heterogeneously-Integrated Transistor Chiplets in Interposers | hrl.com | Herrault | US-P |
3.2 | 20 | 16 | Wafer-Level Packages for GaN Technologies & On Wafer Humidity Test | gmail.com | Stieglauer | Germany |
3.3 | 20 | 54 | Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies | qorvo.com | Weng | US-P |
3.4 | 20 | 14 | Seeing the World from a Drop of Water: A Novel Environment-Protecting Technique for Photoresist Strip, Metal Lift-off, and Etching Byproduct Removal | winfoundry.com | Lo | Taiwan |
3.5 | 20 | 40 | LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating | us.af.mil | Werner | US-E |
3.6 | 20 | 50 | Theoretical study of recoil-implanted N atoms in Mg-implanted GaN | kwansei.ac.jp | Herbert | Japan |
4.1 | 45 | 47 Invited |
Progress Towards Prolonged IC Deployment Into Previously Inaccessible Hostile Environments Via Development of SiC JFET-R ICs | nasa.gov | Neudeck | US-E |
4.2 | 20 | 43 | The Rise of Power SiC and GaN Market and The Impact of COVID-19 | yole.fr | Martin | France |
4.3 | 30 | 57 Invited |
Processing Choices For Achieving Long Term IC Operation at 500° C | nasa.gov | Spry | US-E |
4.4 | 20 | 31 | Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications | mail.cgu.edu.tw | Wang | Taiwan |
5.1 | 20 | 62 | Performance of 0.3 um gate length GaN HEMT by using i-line stepper for high power c-band applications | wavice.com | Lee | Taiwan |
5.2 | 20 | 35 | Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs | winfoundry.com | Wu | Taiwan |
5.3 | 20 | 52 | Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer | FBH-Berlin.de | Yazdani | Germany |
5.4 | 20 | 56 | Temperature Dependent Measurement of GaN Impact Ionization Coefficients | nd.edu | Fay | US-C |
5.5 | 20 | 27 | Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer | mail.cgu.edu.tw | Wang | Taiwan |
5.6 | 20 | 38 | Using the CnCV Technique to Explore AlN as an Alternative Passivation Layer in GaN HEMT Technology | semilabsdi.com | Wilson | US-E |
6.1 | 20 | 48 | GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers | fujitsu.com | Okamoto | Japan |
6.2 | 20 | 6 | Fabrication of GaN-on-SiC Via by using OES endpoint detection | elta.co.il | Toledo | Israel |
6.3 | 20 | 34 | Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness | veeco.com | Tyler | US-E |
6.4 | 20 | 26 | A Systematic Approach for Determining Overlay Spec Limits in Photolithography | qorvo.com | Wang | US-P |
6.5 | 20 | 44 | Uncovering Process Interdependency Using Data Mining | bistel.com | Lee | US-P |
6.6 | 20 | 23 | Electrostatic discharge (ESD) in AlGaN/GaN HEMT due to fabrication process. | gmail.com | Baram | Israel |
7.1 | 45 | Invited | Low-temperature direct wafer bonding innovating CS device technologies | Osaka City Univ. | Shigekawa | Japan |
7.2 | 30 | Invited | Driving Lower Fiber Optical System Power Consumption through Monolithic Electronic and Optoelectronic Integration | Elphic | Tarof | Canada-E |
7.3 | 20 | 42 | How are high-volume 3D Sensing applications shaping the Compound Semiconductor Industry? | yole.fr | Martin | France |
7.4 | 20 | 9 | Rapid Capacity Simulation For Planning a 200mm III-V Giga Fab | maxieg.com | Looi | US-E |
8.1 | 20 | 39 | Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication | imec.be | Geens | Belgium |
8.2 | 20 | 17 | Evaluation of novel iron-free QuanFINE<sup>TM</sup> structure by 100nm and 150nm AlGaN/GaN HEMT technology | ums-rf.com | Grünenpütt | Germany |
8.3 | 20 | 24 | Thin Al<sub>0.5</sub>Ga<sub>0.5</sub>N/GaN HEMTs on QuanFINE<sup>®</sup> Structure | swegan.se | Chen | Sweden |
8.4 | 20 | 29 | Low Off-state Leakage Current Normally-off p-GaN Gate HEMT Using Al<sub>0.5</sub>Ga<sub>0.5</sub>N Etching Stop Layer Design | mail.cgu.edu.tw | Wang | Taiwan |
8.5 | 20 | 59 | A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers | gatech.edu | Cho | US-E |
8.6 | 20 | 30 | High Thermal Dissipation Normally-off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate | mail.cgu.edu.tw | Huang | Taiwan |
9.1 | 20 | 41 | 5G Smartphone and Telecom Infrastructure markets are empowered by Compound Semiconductors | yole.fr | Martin | France |
9.2 | 20 | 49 | State-of-the-Art Etch and Deposition Processing of highly doped AlScN for 5G and Wi-Fi Filter Applications | spts.com | Short | UK |
9.3 | 20 | 25 | Developing production process for high performance piezoelectrics in MEMS applications | gmail.com | Mazzalai | Switzerland |
9.4 | 20 | 18 | Continual Improvement of End-to-End Yield in GaAs-based Laser Diode Manufacturing | maxieg.com | Welch | US-E |
9.5 | 20 | 53 | Benzocyclonbute (BCB) Process Development and Optimization for High-Speed GaAs VCSELs and Photodetectors | illinois.edu | Wu | US-C |
9.6 | 20 | 37 | Standing Wave Engineering for Mode Control in Single-Mode Oxide-Confined Vertical-Cavity Surface-Emitting Lasers | illinois.edu | Pikul | US-C |