A. Islam
Air Force Research Laboratory
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May 10, 2022 // 4:50pm
4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab
G. Cueva, MACOME. Werner, KBR, Wright-Patterson AFBA. Islam, Air Force Research LaboratoryN. Miller, Air Force Research LaboratoryA. Crespo, Air Force Research Laboratory, Sensors DirectorateNicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAD. Walker Jr., Air Force Research LaboratoryGary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHR. Fitch, Air Force Research LaboratoryK. Chabak, Air Force Research Laboratory, Sensors DirectorateAndrew Green, Air Force Research Laboratory, Sensors DirectorateKyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USADownload PaperLoading...
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12.2.2023 High Temperature Studies of 140 nm T-gate AlGaN/GaN HEMT Devices
Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAAdam Miesle, KBR Inc.Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAHanwool Lee, KBR Inc.Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,N. Miller, Air Force Research LaboratoryMatt Grupen, Air Force Research Laboratory, Sensors DirectorateKyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAAntonio Crespo, Air Force Research Laboratory, Sensors DirectorateGary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHWenjuan Zhu, University of Illinois, UrbanaKelson Chabak, Air Force Research Laboratory, Sensors DirectorateAndrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH, -
4A.2 – Temperature Effects on DC and RF Characteristics of 140 nm AlGaN/GaN HEMTs with Regrown Contacts
B. K. Sarker, KBR, Inc.Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAD.E. Walker Jr. , Sensor Electronic TechnologyK. Nishimura, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAA. Crespo, Air Force Research Laboratory, Sensors DirectorateGary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHA.J. GreenA. Islam, Air Force Research LaboratoryAbstract
We conducted DC and small-signal RF characterization on AlGaN/GaN high-electron-mobility transistors (HEMTs) over a range of temperatures to examine temperature-dependent variations in key device performance metrics including transconductance (gm), extrinsic cutoff frequency (fT), maximum gain frequency (fmax), unilateral power gain (UPG), and maximum stable gain (MSG). Our findings indicate that device parameters decline with increasing temperature at a distinct rate. Specifically, a 100°C rise results in fT and fmax dropping by about 8 GHz and 17 GHz, respectively, while MSG decreases by approximately 1 dB. These changes are inherent to the device physics and are not influenced by its geometry or operational mode.