A. Kumar

Imec

  • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

    N. Collaert, Imec
    R. Alcotte, Imec
    A. Alian, Imec
    M. Asad, Imec
    I. Bagal, Imec
    S. Banerjee, imec
    G. Boccardi, Imec
    P. Cardinael, Imec and Université catholique de Louvain
    I. Comart, imec & Vrije Universiteit Brussels
    D. Desset, Imec
    R. ElKashlan, Imec
    F. Filice, Imec
    G. Gramegna, Imec
    H. Jafarpoorchekab, Imec
    A. Khaled, Imec
    A. Kumar, Imec
    B. Kunert, Imec
    Y. Mols, Imec
    B. O’Sullivan, Imec
    S. Park, Imec
    U. Peralagu, Imec
    N. Pinho, Imec
    A. Rathi, Imec
    A. Sibaja-Hernandez, Imec
    S. Sinha, Imec
    D. Smellie, Imec
    X. Sun, Imec
    A. Vais, Imec
    B. Vanhouche, Imec
    B. Vermeersch, Imec
    D. Xiao, Imec
    S. Yadav, Imec
    D. Yan, Imec
    H. Yu, Imec
    Y. Zhang, Imec
    J. Van Driessche, Imec
    P. Wambacq, Imec
    M. Peeters, Imec
    B. Parvais, imec & Vrije Universiteit Brussels

    4.2.1.2024 Silicon Meets Compound Semiconductors

  • 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

    G. Boccardi, Imec
    A. Vais, Imec
    A. Kumar, Imec
    S. Yadav, Imec
    Y. Mols, Imec
    R. Alcotte, Imec
    L. Witters, Imec
    J. De Backer, Imec
    A. Mingardi, Imec
    A. Milenin, Imec
    K. Vandersmissen, Imec
    N. Heylen, Imec
    K. Ceulemans, Imec
    D. Goossens, Imec
    F. Sebaai, Imec
    J-P Soulié, Imec
    R. Langer, Imec
    B. Kunert, Imec
    B. Parvais, imec vzw, Leuven, Belgium
    N. Collaert, Imec

    4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

    Loader Loading...
    EAD Logo Taking too long?

    Reload Reload document
    | Open Open in new tab

    Download [4.91 MB]

  • 7A.1 – First Demonstration of InP HBTs on InP-on-Si (InPOSi) Substrate: A Cost-Effective and Sustainable III/V-on-Si Technology for Advanced RF Applications

    A. Vais, Imec
    A. Kumar, Imec
    S. Yadav, Imec
    G. Boccardi, Imec
    Y. Mols, Imec
    R. Alcotte, Imec
    B. Vermeersch, Imec
    U. Peralagu, Imec
    c. Roda Neve, SOITEC
    Bruno Ghyselen, SOITEC
    B. Parvais, imec vzw, Leuven, Belgium
    B. Kunert, Imec
    N. Collaert, Imec

    7A.1 Final.2025

    Abstract
    In this work, we present the first demonstration of InP HBTs grown and fabricated on an engineered InPOSi substrate. Physical and electrical characterizations were performed to measure its crystal quality and device performance. We show that the performance of devices fabricated on an InPOSi substrate is close to devices fabricated on a native InP substrates making such a technology suitable for advanced RF applications. Fabricated devices show ft/fmax of ~140 GHz/70GHz with BVceo/BVcbo of 3.5 V/5.5 V at an ON current density of 8mA/μm2.