A. Leuther
Fraunhofer Institute
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A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage shift
P. Waltereit, Fraunhofer InstituteA. Leuther, Fraunhofer InstituteJ. Rüster, Fraunhofer InstituteH. Czap, Fraunhofer InstituteR. Iannucci, Fraunhofer InstituteS. Müller, Fraunhofer Institute