4A.3 Final.2025

Abstract
This paper presents dual-gate (2 × 0.5 μm) RF high electron mobility transistors (HEMTs) on P-GaN/AlGaN on Si substrate for next-generation airborne applications. The dual-gate architecture enhanced switching performance and reduced power loss, achieving a 77% reduction in off-state gate leakage current (0.3 mA/mm at VGS = -6V) and improving the ION/IOFF ratio by 1.9 orders of magnitude (5.45 × 10⁴) over single-gate devices. DC characterization revealed a current density (IDS) of 712 mA/mm, on-resistance (RON) of 3.12 Ω.mm, peak transconductance (GM) of 223 mS/mm, and pinch-off voltage (VP) of -2.4 V. S-parameter measurements showed a cut-off frequency (fT) of 7.12 GHz and a maximum oscillation frequency (fMAX) of 24.18 GHz. These results support the integration of the proposed RF devices with existing E-mode power devices on a single P-GaN/AlGaN HEMT on Si platform, paving the way for integrated transceiver modules.