A. R. Peaker

The University of Manchester

  • 8A.3 – Vertical Schottky Barrier Diodes with Optical Floating Zone Growth of β-Ga2O3 Single Crystals and Electrical Defect Study

    V. L. Ananthu Vijayan, Anna University, University of Bristol
    V. S. Charan, University of Bristol
    C. A. Dawe, University of Bristol
    V. P. Markevich, The University of Manchester
    M. P. Halsall, The University of Manchester
    A. R. Peaker, The University of Manchester
    S. M. Babu, University of Bristol
    M. Kuball, University of Bristol, Bristol, UK

    8A.3 Final.2025

    Abstract
    This study reports the melt growth of β-Ga2O3 single crystals using the Optical Floating Zone (OFZ) technique, and defect analysis in these wafers. X-ray diffraction (XRD) rocking curves show a full width at half maximum (FWHM) of 230 arcsec and the chemical mechanical polished surfaces exhibit a low surface roughness of 1.1 nm. Schottky barrier diodes (SBDs) were fabricated on these substrates and deep-level transient spectroscopy (DLTS) measurements were performed to investigate defects within the bandgap. DLTS analysis revealed a dominant single deep-level trap at 0.69 eV below the conduction band, attributed to Fe impurities from the source material used for melt-growth.