Alex Ma

University of Alberta
  • Low-Voltage and Low-Cost ZnO Based Ultra-Thin-Film Transistors

    Gem Shoute, University of Alberta
    Alex Ma, University of Alberta
    Amir Afshar, University of Alberta
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  • High Breakdown Voltage ZnO Thin Film Transistors Grown by Low Temperature Atomic Layer Deposition

    Alex Ma, University of Alberta
    Amir Afshar, University of Alberta
    Gem Shoute, University of Alberta
    Kenneth Cadien, University of Alberta
    Douglas Barlage, University of Alberta
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  • Plasma Enhanced Atomic Layer Deposited Silicon Nitride on GaN MISCAPs with High Charge and Mobility

    Ken Cadien, University of Alberta
    Eric Milburn, University of Alberta
    Alex Ma, University of Alberta
    Gem Shoute, University of Alberta
    Doug Barlage, University of Alberta

    In this work fabrication of MISCAP structures was achieved on n-type gallium nitride using atomic layer deposited silicon nitride as the dielectric layer and sputtered ruthenium contacts. Preliminary values extracted from C-f data suggests very high capacitance densities up to 3.18 μF∙cm-2 and very high accumulation-mode field effect mobility, as high as 325 cm2V-1s-1 at a bias voltage of 2.5 V.

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