Anders Lundskog
Infineon Technologies Austria AG
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5b.3 Effect of Carbon Doping on the Voltage-Blocking Properties of AlN/AlGaN/GaN Heterostructures
Martin Huber, Infineon Technologies Austria AGIngo Daumiller, Infineon Technologies Austria AGAndrei Andreev, Infineon Technologies Austria AGMarco Silvestri, Infineon Technologies Austria AGLauri Knuuttila, Infineon Technologies Austria AGMichael Wahl, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbHMichael Kopnarski, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbHAlberta Bonanni, Johannes Kepler University LinzAnders Lundskog, Infineon Technologies Austria AG