Andrei Osinsky

Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
  • May 02, 2019 // 3:40pm – 4:30pm

    18.5 b-Ga2O3 and related alloys grown by MOCVD on a Multi-wafer production system

    Nazar Orishchin, Agnitron Technology, Inc
    Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
    Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
    Download Paper
  • 13.4 Advances toward industrial compatible epitaxial growth of β-Ga2O3 and alloys for power electronics

    Ross Miller, Agnitron Technology
    Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
    Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
    Download Paper
  • 7.2.2023 Fabrication and Analysis of β-Ga2O3 Schottky Diodes with Drift Layer Grown by MOCVD on (001) Substrate

    Prakash P. Sundaram, University of Minnesota, Minneapolis, MN 55455, USA
    Fengdeng Liu, University of Minnesota, Minneapolis, MN 55455, USA
    Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
    Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
    Bharat Jalan, University of Minnesota, Minneapolis, MN 55455, USA
    Steven J. Koester, University of Minnesota, Minneapolis, MN 55455, USA

    7.2.2023 Csmantech_Manuscript_Final_PrakashPS

  • 18.7.2023 Manufacturable processes and performance characteristics of few-layer hexagonal boron nitride-based templates on sapphire

    Tim Vogt, Agnitron Technology, Inc
    Vitali Soukhoveev, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
    Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
    Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA

    18.07.2023 CS_MANTECH-manuscript 2023