Andrew Ketterson
Qorvo Inc.
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Improved T-Gate Yield Using E-Beam Trilayer Resist Process
Huatang Chen, TriQuint Semiconductor, TXAndrew Ketterson, Qorvo Inc.Marcus King, TriQuint Semiconductor, TXKeith Salzman, TriQuint Semiconductor, TXVicki Milam, TriQuint Semiconductor, TXJames Halvorson, TriQuint Semiconductor, TXJan Campbell -
20.3 Some Process Development Issues for Ka-band GaN HEMT Individual Source Via (ISV)
Yongjie Cui, Qorvo Inc.John Hitt, Qorvo Inc.Tso-Min Chou, Qorvo Inc.Shuoqi Chen, Qorvo Inc.David Gonzalez, Qorvo, Inc.Yinbao Yang, Qorvo, Inc.Trish Smith, Qorvo Inc.Ju-Ai Ruan, Qorvo Inc.Vivian Li, Qorvo Inc.Cathy Lee, Qorvo Inc.Andrew Ketterson, Qorvo Inc. -
6a.4 Ablation Laser Dicing for GaN HEMT Device on 100um SiC/Au Substrates
Vivian Li, Qorvo Inc.Wade Skelton, Qorvo Inc.Yinbao Yang, Qorvo, Inc.Andrew Ketterson, Qorvo Inc.Michael Lube, QorvoHarold Isom, QorvoCathy Lee, Qorvo Inc.Rob Kraft, Qorvo Inc.